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參數(shù)資料
| 型號： | T2316407A-50 |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 71-144822-21P |
| 中文描述： | 4米× 4動態(tài)隨機存儲器EDO公司頁面模式 |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 136K |
| 代理商： | T2316407A-50 |
TE
CH
tm
AC CHARACTERISTICS
(continued)
Preliminary T2316407A
Taiwan Memory Technology, Inc. reserves the right
P. 6
to change products or specifications without notice.
Publication Date: APR. 2001
Revision:0.B
T2316405A
-50
-60
-70
-10
AC CHARACTERISTICS
PARAMETER
Output Buffer Turn-off to OE
Write Command Setup Time
SYM
Min Max Min Max Min Max Min Max
tOFF2
0
12
0
tWCS
0
0
tWCH
8
10
tWCR
21
24
UNIT
Notes
15
0
20
0
25
ns 16
ns 11,14
ns
14
0
0
Write Command Hold Time
13
15
Write Command Hold Time (Reference
toRAS)
Write Command Pulse Width
27
40
ns
tWP
tRWL 10
tCWL
tDS
tDH
tDHR
tRWD 64
tAWD 39
tCWD 26
tT
tREF
tRPC
tCSR
tCHR
tOEH
8
10
10
15
ns 14
ns 14
ns 14
ns 12
ns 12
ns
ns 11
ns 11
ns 11
ns 2,3
ms
ns
ns 6
ns 6
Write Command to RAS Lead Time
10
13
25
Write Command to CAS Lead Time
Data-in Setup Time
8
10
13
25
0
0
0
0
Data-in Hold Time
8
10
13
20
Data-in Hold Time (Reference to RAS)
21
24
27
45
RAS
to
WE
Delay Time
79
94
130
Column Address to WE Delay Time
49
59
80
CAS to WE Delay Time
Transition Time (rise or fall)
34
44
55
2
50
2
50
2
50
2
50
Refresh Period (2048 cycles)
32
32
32
32
RAS
to
CAS
Precharge Time
5
5
5
5
CAS Setup Time (CBR REFRESH)
5
10
10
10
CAS Hold Time (CBR REFRESH)
8
10
10
10
OE Hold Time From WEDuring Read-
Modify-Write Cycle
OE Low to CAS High Setup Time
8
10
13
25
ns
15
tOES
tOEH
C
tOEP
tORD
5
5
5
5
ns
OE
High Hold Time From
CAS
High
5
5
5
5
ns
OE High Pulse Width
10
10
10
10
ns
OE
Setup Prior to
RAS
During Hidden
Refresh Cycle
Data Output Hold After CAS Returning Low tCOH
Output Disable Delay From WE
5
7
10
13
ns
5
5
5
5
ns
ns
tWHZ
10
15
20
25
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