TE
CH
tm
DC CHARACTERISTICS
(Ta = 0 to 70
°
C
) T2316405A-10 Vcc = 2.6V
±
0.2V, Vss = 0V
T2316407A-50/60/70 Vcc = 3.3V
±
0.3V, Vss = 0V
Preliminary T2316407A
Taiwan Memory Technology, Inc. reserves the right
P. 4
to change products or specifications without notice.
Publication Date: APR. 2001
Revision:0.B
T2316405A
-50
-60
-70
-10
Parameter
Symbol Min Ma
x
Min Ma
x
Min Ma
x
Min Ma
x
Unit
Test Condition
Input Leakage Current
ILI
-5
5
-5
5
-5
5
-5
5
uA
0V
≤
Vin
≤
Vcc+ 0.3V
Other pins = 0V
0V
≤
Vout
≤
Vcc
Dout = disable
V High Iout= -2.0mA
Output Leakage
Current
ILO
-5
5
-5
5
-5
5
-5
5
uA
Output High Voltage
VOH 2.0
-
2.0
-
2.0
-
2.0
-
Output Low Voltage
VOL
-
0.8
-
0.8
-
0.8
-
0.8
V Low Iout=2.0mA
Operating Current
Icc1
-
95
-
90
-
80
-
50 mA
RAS
,
CAS
cycling
tRC=min
TTL interface,
RAS,CAS=VIH,
DOUT=High-Z
0.5 mA CMOS interface,
RAS, CAS> Vcc-0.2V
Standby Current
Icc2
-
2
-
2
-
2
-
2
mA
Standby Current
Icc3
-
0.5
-
0.5
-
0.5
-
EDO Page Mode
Current
Icc4
-
95
-
90
-
80
-
50 mA RAS=VIL,CAS
cycling, tPC= min
50 mA CAS=VIH, RAS
cycling,
t
RC
= min
RAS-only refresh
Current
Icc5
-
95
-
90
-
80
-
CAS Before RAS
Refresh Current
Icc6
-
95
-
90
-
80
-
50 mA
RAS
,
CAS
cycling,
tRC= min
Note: Icc depends on output load condition when the device is selected.
Icc max is specified at the output open condition, Icc is specified as an average current.
CAPACITANCE
(Ta =25
°
C, f = 1M HZ, T2316405A-10 Vcc = 2.6V, T2316407A-50/60/70 Vcc = 3.3V)
Parameter
Input Capacitance
(address)
Input Capacitance
(RAS,CAS,WE,OE)
Output Capacitance
(data-in/out)
Symbol
CI1
Typ
-
Max
5
Unit
pF
CI2
-
7
pF
CI/O
-
7
pF