TE
CH
tm
AC CHARACTERISTICS
(note 1,2,3) (Ta = 0 to 70
°
C)
TEST CONDITIONS:
T2316405A-10 Vcc = 2.6V
±
0.2V , T2316407A-50/60/70 Vcc = 3.3V
±
0.3V
V
IH
/V
IL
=2.0/0.8V,V
OH
/V
OL
=2.0/0.8V
Input rise and fall times: 2ns , Output Load: 2TTL gate + CL (100pF)
AC CHARACTERISTICS
PARAMETER
Read or Write Cycle Time
Read Write Cycle Time
EDO-Page-Mode Read or Write Cycle Time tPC
EDO-Page-Mode Read-Write Cycle Time
Access Time From RAS
Access Time From CAS
Access Time From OE
Access Time From Column Address
Access Time From
CAS
Precharge
RAS Pulse Width
RAS Pulse Width (EDO Page Mode)
Preliminary T2316407A
Taiwan Memory Technology, Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date: APR. 2001
Revision:0.B
T2316405A
-50
-60
-70
-10
SYM
Min Max Min Max Min Max Min Max
84
104
tRWC 108
135
20
25
tPCM
56
68
tRAC
50
tCAC
13
tOAC
13
tAA
25
tACP
30
tRAS
50 10K 60 10K 70 10K 100 10K ns
tRASC 50 100
K
K
tRSH
8
10
tRP
30
40
tCAS
8 10K 10 10K 13 10K 25 10K ns
tCSH
38
40
tCP
10
10
tRCD
12 37
14
45 14
tCRP
5
5
tASR
0
0
tRAH
8
10
tRAD
10 25
12
30 12
tASC
0
0
tCAH
8
10
tAR
21
24
UNIT
Notes
tRC
124
160
30
78
180
240
40
120
ns
ns
ns
ns
60
15
15
30
35
70
20
20
35
40
100 ns 4
25
25
50
55
ns 5
ns 13
ns 8
ns
60 100
70 100
K
100 100
K
ns
RAS Hold Time
RAS Precharge Time
CAS
Pulse Width
CAS Hold Time
CAS
Precharge Time (EDO Page Mode)
RAS to CAS Delay Time
CAS to RAS Precharge Time
Row Address Setup Time
Row Address Hold Time
RAS to Column Address Delay Time
Column Address Setup Time
Column Address Hold Time
Column Address Hold Time (Reference to
RAS)
Column Address to RAS Lead Time
Read Command Setup Time
Read Command Hold Time Reference to
CAS
Read Command Hold Time Reference to
RAS
CAS
to Output in Low-Z
Output Buffer Turn-off Delay From CASor
RAS
13
50
25
70
ns
ns
45
10
100
10
25 75
5
0
15
20 50
0
20
ns
ns
ns 7
ns
ns
ns
ns 8
ns
ns
50
35
5
0
10
0
13
27
45
ns
tRAL
tRCS
tRCH
25
0
30
0
35
0
50
0
ns
ns 14
ns 9,14
0
0
0
0
tRRH
0
0
0
0
ns
9
tCLZ
tOFF1
0
0
0
0
ns
0
12
0
15
0
20
0
25
ns
10,16