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參數(shù)資料
| 型號(hào)： | T224162B-50 |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 256K x 16 DYNAMIC RAM EDO PAGE MODE |
| 中文描述： | 256K × 16動(dòng)態(tài)隨機(jī)存儲(chǔ)器EDO公司頁面模式 |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 143K |
| 代理商： | T224162B-50 |
TE
CH
tm
AC CHARACTERISTICS
PARAMETER
Column Address to WE
Delay Time
CAS to WE Delay Time
Transition Time (rise or fall)
tT
Refresh Period (512 cycles)
tREF
RAS to CAS Precharge
Time
CAS Setup Time (CBR
REFRESH)
CAS Hold Time (CBR
REFRESH)
OE
Hold Time From
WE
During Read-Modify-Write
Cycle
OE Low to CAS High
Setup Time
OE High Hold Time From
CAS High
OE
High Pulse Width
OE Setup Prior to CAS
During Hidden Refresh
Cycle
Last
CAS
Going Low to
First CAS Returning High
Data Output Hold After CAS
Returning Low
Output Disable Delay From
WE
T224162B
Taiwan Memory Technology, Inc. reserves the right
P. 6
to change products or specifications without notice.
Publication Date:AUG. 2000
Revision:L
-22
-25
-28
-35
-45
-50
SYM
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN MAX
MIN
MAX
UNIT
Notes
tAWD
21
21
24
31
35
43
ns
11
tCWD
17
17
18
25
27
33
2.5
50 ns
2,3
8 ms
ns
11,18
1.5
50
8
1.5
50
8
1.5
50
8
2.5
50
8
2.5
50
8
tRPC
10
10
10
10
10
10
ns
tCSR
5
5
5
10
10
10
ns
1,18
tCHR
7
7
7
10
10
10
ns
1,19
tOEH
4
4
4
4
6
8
ns
16
tOES
4
4
4
4
5
5
ns
tOEHC
2
2
2
2
2
2
ns
tOEP
2
2
2
2
2
2
ns
tORD
0
0
0
0
0
0
ns
tCLCH
4
4
4
4
6
8
ns
21
tCOH
3
3
3
3
4
5
ns
tWHZ
3
6
3
7
3
7
3
7
3
7
3
9 ns
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