參數(shù)資料
型號: T221160A-30S
廠商: TM Technology, Inc.
英文描述: 64K x 16 DYNAMIC RAM FAST PAGE MODE
中文描述: 64K的× 16動(dòng)態(tài)RAM快速頁面模式
文件頁數(shù): 5/14頁
文件大?。?/td> 134K
代理商: T221160A-30S
TE
CH
tm
AC CHARACTERISTICS
(note 1,2,3) (Ta = 0 to 70
°
C)
AC TEST CONDITIONS:
Vcc=5V
±
10%, input pulse level = 0 to 3V
Input rise and fall times: 2ns
Output Load: 2TTL gate + CL (50pF)
AC CHARACTERISTICS
PARAMETER
Read or Write Cycle Time
Read-Modify-Write Cycle Time
Fast-Page-Mode Read or Write Cycle Time
Fast-Page-Mode Read-Write Cycle Time
Access Time From RAS
Access Time From CAS
Access Time From OE
Access Time From Column Address
Access Time From CAS Precharge
RAS Pulse Width
RAS Pulse Width
RAS Hold Time
RAS Precharge Time
CAS Pulse Width
CAS Hold Time
CAS Precharge Time
RAS to CAS Delay Time
CAS to RAS Precharge Time
Row Address Setup Time
Row Address Hold Time
RAS to Column Address Delay Time
Column Address Setup Time
Column Address Hold Time
Column Address Hold Time (Reference to
RAS)
Column Address to RAS Lead Time
Read Command Setup Time
Read Command Hold Time Reference to CAS tRCH
Read Command Hold Time Reference to RAS
tRRH
CAS to Output in Low-Z
Output Buffer Turn-off Delay From CASor
RAS
T221160A
Taiwan Memory Technology, Inc. reserves the right
P. 5
to change products or specifications without notice.
Publication Date: FEB. 2002
Revision:A
-25
-30
-35
-40
SYM
MIN MAX MIN MAX MIN MAX MIN MAX
43
55
tRWC 65
85
tPC
15
20
tPCM
37
42
tRAC
25
30
tCAC
7
tOAC
7
tAA
12
16
tACP
14
18
tRAS
tRASC 25
100K
30
100K
35
100K
40
100K
ns
tRSH
7
8
tRP
15
20
tCAS
4
10K 6
10K
tCSH
21
26
tCP
3
3
tRCD
10
17
10
21
tCRP
3
3
tASR
0
0
tRAH
5
5
tRAD
8
13
8
14
tASC
0
0
tCAH
4
4
UNIT
Notes
tRC
65
95
23
49
75
105
25
52
ns
ns
ns
ns
ns
4
ns
5
ns
13
ns
8
ns
35
9
9
18
20
40
10
10
20
22
8
8
25 10K 30 10K 35 10K 40 10K ns
9
23
8
30
4
10
3
0
5
8
0
4
10
25
ns
ns
10K 10 10K ns
35
5
25
10
5
0
5
16
8
0
5
ns
ns
ns
7
ns
ns
ns
ns
8
ns
ns
ns
29
18
tAR
22
26
30
34
tRAL
tRCS
12
0
0
14
0
0
16
0
0
18
0
0
ns
ns
14
ns
9,14
ns
9
0
0
0
0
tCLZ
3
3
3
3
ns
tOFF1
3
15
3
15
3
15
3
15
ns
10,16
相關(guān)PDF資料
PDF描述
T221160A-35J 64K x 16 DYNAMIC RAM FAST PAGE MODE
T221160A-35S 64K x 16 DYNAMIC RAM FAST PAGE MODE
T224160B 256K x 16 DYNAMIC RAM FAST PAGE MODE
T224160B-30 256K x 16 DYNAMIC RAM FAST PAGE MODE
T224160B-35 256K x 16 DYNAMIC RAM FAST PAGE MODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T221160A-35J 制造商:TMT 制造商全稱:TMT 功能描述:64K x 16 DYNAMIC RAM FAST PAGE MODE
T221160A-35S 制造商:TMT 制造商全稱:TMT 功能描述:64K x 16 DYNAMIC RAM FAST PAGE MODE
T221N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHASE CONTROL THYRISTORS
T221N08BOF 功能描述:SCR模塊 800V 6.5KA RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):20 mA 開啟狀態(tài)電壓:1.43 V 保持電流(Ih 最大值): 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK
T221N08EOF 功能描述:SCR模塊 800V 6.5KA RoHS:否 制造商:Vishay Semiconductors 開啟狀態(tài) RMS 電流 (It RMS):260 A 不重復(fù)通態(tài)電流:4000 A 最大轉(zhuǎn)折電流 IBO:4200 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:1.6 kV 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):20 mA 開啟狀態(tài)電壓:1.43 V 保持電流(Ih 最大值): 柵觸發(fā)電壓 (Vgt): 柵觸發(fā)電流 (Igt): 最大工作溫度:+ 150 C 安裝風(fēng)格:Chassis 封裝 / 箱體:INT-A-PAK