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參數(shù)資料
| 型號(hào)： | T1235H-600T |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 三端雙向可控硅開(kāi)關(guān) |
| 英文描述： | 12A TRIACS |
| 中文描述： | 第12A雙向可控硅 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | T1235H-600T |
1/7
MAIN FEATURES:
T1235H Series
SNUBBERLESS
HIGH TEMPERATURE
12A TRIAC
S
April 2002 - Ed: 5A
DESCRIPTION
Specifically designed for use in high temperature
environment (found in hot appliances such as
cookers, ovens, hobs, electric heaters, coffee
machines...), the new 12 Amps T1235H triacs
provide an enhanced performance in terms of
power loss and thermal dissipation. This allows for
optimization of the heatsinking dimensioning,
leading to space and cost effectivness when
compared to electro-mechnical solutions.
Based on ST snubberless technology, they offer
high commutation switching capabilities and high
noise immunity levels. And, thanks to their clip
assembly technique, they provide a superior
performance in surge current handling.
Symbol
Value
Unit
I
T(RMS)
12
A
V
DRM
/V
RRM
600
V
I
GT (Q
1
)
35
mA
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
Tc = 135°C
12
A
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 60 Hz
t = 16.7 ms
145
A
F = 50 Hz
t = 20 ms
140
I
2
t
I
2
t Value for fusing
tp = 10 ms
112
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
F = 120 Hz
Tj = 150°C
50
A/μs
V
DSM
/V
RSM
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25°C
700
V
I
GM
Peak gate current
tp = 20 μs
Tj = 150°C
4
A
P
G(AV)
Average gate power dissipation
Tj = 150°C
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 150
°C
G
A2
A1
G
A2
A2
A1
A2
A2
G
A1
TO-220AB
(T1235-T)
D
2
PAK
(T1235-G)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T1235H-600TRG | 12A TRIACS |
| T12xxxH | Standard Triacs(標(biāo)準(zhǔn)雙向可控硅) |
| T14L2M16A | 128K X 16 HIGH SPEED CMOS STATIC RAM |
| T14L2M16A-10S | 128K X 16 HIGH SPEED CMOS STATIC RAM |
| T14L2M16A-12C | 128K X 16 HIGH SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T1235H-600TRG | 功能描述:雙向可控硅 12 Amp 600 Volt RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| T1235H-600T-TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:12A TRIACS |
| T1235H6F | 制造商:JIEJIE 制造商全稱:JIEJIE 功能描述:12A TRIACs |
| T1235H6G | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High temperature 12 A Triacs |
| T1235H-6G | 功能描述:雙向可控硅 Hi temp 12A 雙向可控硅 RoHS:否 制造商:STMicroelectronics 開(kāi)啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
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