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參數(shù)資料
| 型號(hào)： | SW2N60 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. |
| 中文描述： | 這功率MOSFET生產(chǎn)CHMC先進(jìn)VDMOS器件的SAMWIN技術(shù)。 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 510K |
| 代理商： | SW2N60 |
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Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms
V
DD
DUT
V
DS
+
__
Driver
L
Same Type
as DUT
R
G
●
dv/dt controlled by R
G
●
Is controlled by pulse period
V
GS
V
GS
(Driver)
I
S
(DUT)
V
DS
(DUT)
I
FM
,Body Diode Forward Current
I
RM
di/dt
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
f
Body Diode
Forward Voltage Drop
Gate Pulse Width
D = -Gate Pulse Period
10V
V
DD
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|---|---|
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