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參數(shù)資料
| 型號： | SW2N60 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. |
| 中文描述： | 這功率MOSFET生產(chǎn)CHMC先進VDMOS器件的SAMWIN技術(shù)。 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 510K |
| 代理商： | SW2N60 |
2/6
Electrical Characteristics
(Tc=25
℃
unless otherwise noted)
Value
Symbol
Parameter
Test Conditions
Min
Typ
Max
Off Characteristics
BV
DSS
Drain- Source Breakdown Voltage
V
GS
=0V,I
D
=250uA
600
-
-
V
△
BV
DSS
/
△
Tj
Breakdown Voltage Temperature
coefficient
I
D
=250uA,referenced to 25
℃
-
0.17
-
V/
℃
V
DS
=600V, V
GS
=0V
I
DSS
Drain-Source Leakage Current
V
DS
=480V, Tc=125
℃
-
-
1
uA
Gate-Source Leakage Current
V
GS
=30V,V
DS
=0V
-
-
100
nA
Gate-Source Leakage Reverse
V
GS
=-30V, V
DS
=0V
-
-
-100
nA
On Characteristics
V
GS
(th)
Gate Threshold Voltage
V
DS
=V
GS
,I
D
=250uA
2.0
-
4.0
V
R
DS(ON)
Static Drain-Source On-state
Resistance
V
GS
=10V,I
D
=0.9A
-
-
5
ohm
Dynamic Characteristics
Ciss
Input Capacitance
-
-
＊
520
Coss
Output Capacitance
-
-
50
Crss
Reverse Transfer Capacitance
-
-
11
Dynamic Characteristics
t
d(on)
Turn-on Delay Time
-
-
＊
60
t
r
Rise Time
-
-
＊
94
t
d(off)
Turn-off Delay Time
-
-
＊
140
t
f
Fall Time
-
-
＊
74
Q
g
Total Gate Charge
-
-
20
Q
gs
Gate-Source Charge
-
3
-
Q
gd
Gate-Drain Charge (Miller Charge)
-
5
-
nc
V
DS
=480V,V
GS
=10V, I
D
=1.8A
(Note4,5)
ns
V
DD
=300V,I
=1.8A
R
G
=50ohm
(Note4,5)
pF
V
GS
=0V,V
DS
=25V, f=1MHz
I
GSS
Units
Source-Drain Diode Ratings and Characteristics
MAX
TYP
MIN
uc
-
1.5
-
Reverse Recovery Charge
Q
rr
ns
-
250
-
I
S
=1.8A,V
=0V,
dI
F
/dt=100A/us
Reverse Recovery Time
t
rr
V
1.5
-
-
I
S
=1.8A,V
GS
=0V
Diode Forward Voltage
V
SD
7.2
8.0
Pulsed Source Current
I
SM
A
1.8
2.0
Integral Reverse
p-n Junction Diode
in the MOSFET
Continuous Source Current
I
S
Unit.
TO-251(2)
TO-220
Test Conditions
Parameter
Symbol
※
NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L=62.2mH,I
=1.8A,V
=50V,R
G
=0ohm, Starting TJ=25
℃
3. I
SD
≤
1.8A,di/dt
≤
100A/us,V
≤
BVDSS, Starting TJ=25
℃
4. Pulse Test: Pulse Width
≤
300us,Duty Cycle
≤
2%
5. Essentially independent of operating temperature.
6. The Max data with “
＊
” will be reduce soon.
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