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參數(shù)資料
| 型號(hào)： | SW2N60 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. |
| 中文描述： | 這功率MOSFET生產(chǎn)CHMC先進(jìn)VDMOS器件的SAMWIN技術(shù)。 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 510K |
| 代理商： | SW2N60 |
3/6
Fig 1. On-State Characteristics
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 2. Transfer Characteristics
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
(Non-Repetitive)
10
0
10
1
10
-1
10
0
V
ds
,Drain-to-Source voltage [V]
4.0V
V
GS
top: 15V
10V
9V
8V
7V
6V
5.5V
5V
4.5V
bottom:4.0V
I
D
,
0.0
0.5
1.0
1.5
I
D
, Drain Current[A]
2.0
2.5
3.0
3.5
4.0
2
3
4
5
6
7
8
R
D
D
V
GS
=10V
V
GS
=20V
150
℃
25
℃
0.2
0.4
0.6
V
SD
,Source-Drain Voltage[V]
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
Note:
1.v
GS
=0v
2.250us test
I
D
,
0
5
10
15
20
0
2
4
6
8
10
12
V
G
,
Q
G
,Total Gate Charge [nC]
V
DS
=120V
V
DS
=300V
V
DS
=480V
Note:I
D
=1.8A
2
4
6
8
10
10
-1
10
0
25
o
C
V
GS
, Gate-Source Voltage [V]
I
D
,
150
o
C
Note:
1.V
DS
=50V
2.250us pulse test.
10
-1
10
0
10
1
0
100
200
300
400
500
Note:
1.V
GS
=0V
2.f=1MHz.
C
rss
C
iss
C
oss
C
V
DC
,Drain-Source Voltage [V]
Ciss = Cgs+Cgd(Cds=shorted)
Coss= Cds+Cgd
Crss = Cgd
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