參數(shù)資料
型號(hào)： SUM47N10-24L-E3
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
中文描述： N溝道100 -五（副）175度Celcious MOSFET的
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 64K
代理商： SUM47N10-24L-E3
FEATURES
TrenchFET Power MOSFET
175 C Maximum Junction Temperature
100% R
g
Tested
APPLICATIONS
Automotive Such As:
HID Lamp
Ignition Systems
Injection Systems
SUM47N10-24L
Vishay Siliconix
New Product
Document Number: 72827
S-40434—Rev. A, 15-Mar-04
www.vishay.com
1
N-Channel 100-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
100
0.024 @ V
GS
= 10 V
47
0.027 @ V
GS
= 4.5 V
44
D
G
S
N-Channel MOSFET
TO-263
S
D
G
Top View
Ordering Information: SUM47N10-24L—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 175 C)
b
T
C
= 25 C
I
D
47
T
C
= 125 C
27
Pulsed Drain Current
I
DM
70
A
Continuous Source Current (Diode Conduction)
I
S
47
Single Pulse Avalanche Current
I
As
40
Single Pulse Avalanche Energy (Duty Cycle
1%)
L = 0.1 mH
E
As
80
mJ
Maximum Power Dissipation
T
C
= 25 C
P
D
136
b
W
T
A
= 25 C
3.75
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum
Unit
Junction-to-Ambient
t A bi
PCB Mount
R
thJA
40
Free Air
62.5
C/W
Junction-to-Case
R
thJC
1.1
Notes
a.
b.
Surface Mounted on 1” x1” FR4 Board.
See SOA curve for voltage derating.
相關(guān)PDF資料
PDF描述
SUM50N03 SPICE Device Model SUM50N03-13LC
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