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參數(shù)資料
| 型號(hào)： | SUM40N02-12P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) 175C MOSFET |
| 中文描述： | N溝道20 - V（下局副局長(zhǎng)）175C MOSFET的 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | SUM40N02-12P |
SUM40N02-12P
Vishay Siliconix
www.vishay.com
2
Document Number: 72111
S-42351—Rev. D, 20-Dec-04
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
20
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.85
2
3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 20 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 20 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
90
A
V
GS
= 10 V, I
D
= 20 A
0.0095
0.012
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
0.0175
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 C
V
GS
= 4.5 V, I
D
=
15 A
0.022
0.021
0.026
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
10
S
Dynamic
b
Input Capacitance
C
iss
1000
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 10 V, f = 1 MHz
370
pF
Reverse Transfer Capacitance
C
rss
180
Total Gate Charge
b
Q
g
7.5
12
Gate-Source Charge
b
Q
gs
V
= 10 V,
V
= 4.5 V, I
= 40 A
DS
GS
3.5
nC
Gate-Drain Charge
b
Q
gd
D
2.6
Gate Resistance
R
g
1.5
3.0
5.1
Turn-On Delay Time
b
t
d(on)
11
20
Rise Time
b
t
r
V
= 10 V, R
= 0.25
40 A, V
GEN
= 10 V, R
g
= 2.5
10
15
ns
Turn-Off Delay Time
b
t
d(off)
I
D
24
35
Fall Time
b
t
f
9
15
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
c
Continuous Current
I
S
40
A
Pulsed Current
I
SM
90
Forward Voltage
a
V
SD
I
F
= 40 A, V
GS
= 0 V
1.1
1.5
V
Reverse Recovery Time
t
rr
20
40
ns
Peak Reverse Recovery Current
I
RM
I
= 40 A, di/dt = 100 A/ s
F
0.7
1.1
A
Reverse Recovery Charge
Q
rr
0.007
0.022
C
Notes
a.
b.
c.
Pulse test; pulse width
Independent of operating temperature.
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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| SUM40N02-12P_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S), 175Celsius MOSFET |
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