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參數(shù)資料
| 型號： | SUM16N20-125 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 200-V (D-S) 175C MOSFET |
| 中文描述： | N溝道200 -五（副）175C MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 49K |
| 代理商： | SUM16N20-125 |
FEATURES
TrenchFET Power MOSFETS
175 C Junction Temperature
New Low Thermal Resistance Package
PWM Optimized for Fast Switching
APPLICATIONS
Automotive
- 42-V EPS and ABS
- DC/DC Conversion
- Motor Drives
Isolated DC/DC converters
- Primary-Side Switch
- High Voltage Synchronous Rectifier
SUM16N20-125
Vishay Siliconix
New Product
Document Number: 72076
S-31273—Rev. C, 16-Jun-03
www.vishay.com
1
N-Channel 200-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
200
0.125 @ V
GS
= 10 V
0.150 @ V
GS
= 6 V
16
14.6
D
G
S
N-Channel MOSFET
TO-263
S
D
G
Top View
SUM16N20-125
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
200
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current
(T
J
= 175 C)
T
C
= 25 C
I
D
16
T
C
= 125 C
9.2
A
Pulsed Drain Current
I
DM
I
AR
E
AR
25
Avalanche Current
10
Repetitive Avalanche Energy
a
L = 0.1 mH
5
mJ
Maximum Power Dissipation
a
T
C
= 25 C
T
A
= 25 C
c
P
D
100
b
W
3.75
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient (PCB Mount)
c
R
thJA
40
C/W
Junction-to-Case (Drain)
R
thJC
1.5
Notes
a.
b.
c.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
1%.
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|---|---|
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