參數(shù)資料
型號(hào): SUM110N06-3M4L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 60-V (D-S) 175C MOSFET
中文描述: N通道60 - V(下局副局長(zhǎng))175C MOSFET的
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 182K
代理商: SUM110N06-3M4L
SPICE Device Model SUM110N06-3m4L
Vishay Siliconix
www.vishay.com
2
Document Number: 73060
02-Jul-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.5
V
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
1640
A
V
GS
= 10 V, I
D
= 30 A
0.0028
0.0028
V
GS
= 10 V, I
D
= 30 A, T
J
= 125
°
C
0.0041
V
GS
= 10 V, I
D
= 30 A, T
J
= 175
°
C
0.0047
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
0.0036
0.0033
Forward Voltage
a
Dynamic
b
V
SD
I
F
= 90 A, V
GS
= 0 V
0.90
1
V
Input Capacitance
C
iss
11010
12900
Output Capacitance
C
oss
1088
1060
Reverse Transfer Capacitance
C
rss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
645
700
pF
Total Gate Charge
c
Q
g
224
200
Gate-Source Charge
c
Q
gs
50
50
Gate-Drain Charge
c
Q
gd
V
DS
= 30 V, V
GS
= 10 V, I
D
= 110 A
33
33
nC
Notes
a.
b.
c.
Pulse test; pulse width
300
μ
s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
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