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參數(shù)資料
| 型號(hào)： | SUM110N06-3M4L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) 175C MOSFET |
| 中文描述： | N通道60 - V（下局副局長(zhǎng)）175C MOSFET的 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 182K |
| 代理商： | SUM110N06-3M4L |
SPICE Device Model SUM110N06-3m4L
Vishay Siliconix
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 73060
02-Jul-04
www.vishay.com
1
N-Channel 60-V (D-S) 175
°
C MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
55 to 125
°
C
temperature ranges under the pulsed 0 to 10V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to
model the gate charge characteristics while avoiding convergence
difficulties of the switched C
gd
model. All model parameter values
are optimized to provide a best fit to the measured electrical data
and are not intended as an exact physical interpretation of the
device.
SUBCIRCUIT MODEL SCHEMATIC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SUM110N08-07L | N-Channel 80-V (D-S) MOSFET |
| SUM110N08-07 | N-Channel 75-V (D-S) MOSFET |
| SUM110N08-05 | N-Channel 75-V (D-S) 200∑C MOSFET |
| SUM110P06-07L-E3 | P-Channel 60-V (D-S) 175 Degree Celcious MOSFET |
| SUM16N20-125 | N-Channel 200-V (D-S) 175C MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM110N06-3M4L_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) 175 °C MOSFET |
| SUM110N06-3M4L-E3 | 功能描述:MOSFET 60V 110A 375W 3.4mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM110N06-3M9H-E3 | 功能描述:MOSFET 60V 110A 375W 3.9mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM110N08-05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 75-V (D-S) 200∑C MOSFET |
| SUM110N08-05 | 制造商:Vishay Siliconix 功能描述:MOSFET N D2-PAK |
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