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參數(shù)資料
| 型號： | SUM110N03-03 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S) 175C MOSFET |
| 中文描述： | N溝道30 V的（副）175C MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | SUM110N03-03 |
SUM110N03-03
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72260
S-31257—Rev. A, 16-Jun-03
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
30
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2.5
4.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 24 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
120
A
V
GS
= 10 V, I
D
= 30 A
0.002
0.0025
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.0037
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.0044
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
15
S
Dynamic
b
Input Capacitance
C
iss
12500
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1650
pF
Reverse Transfer Capacitance
C
rss
970
Total Gate Charge
b
Q
g
170
250
Gate-Source Charge
b
Q
gs
V
= 15 V,
V
= 10 V, I
= 110 A
DS
GS
57
nC
Gate-Drain Charge
b
Q
gd
D
30
Turn-On Delay Time
b
t
d(on)
20
35
Rise Time
b
t
r
V
= 15 V, R
= 0.18
110 A, V
GEN
= 10 V, R
G
= 2.5
125
190
ns
Turn-Off Delay Time
b
t
d(off)
I
D
70
105
Fall Time
b
t
f
25
40
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
c
Continuous Current
I
S
110
A
Pulsed Current
I
SM
350
Forward Voltage
a
V
SD
I
F
= 50 A, V
GS
= 0 V
0.9
1.5
V
Reverse Recovery Time
t
rr
70
140
ns
Peak Reverse Recovery Current
I
RM
I
= 50 A, di/dt = 100 A/ s
F
3
4.5
A
Reverse Recovery Charge
Q
rr
0.1
0.31
C
Notes
a.
b.
c.
Pulse test; pulse width
Independent of operating temperature.
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SUM110N03-03P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S), 175C MOSFET |
| SUM110N03-03P-E3 | 功能描述:MOSFET 30V 110A 375W 2.6mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM110N03-04P | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 30V 110A 3-Pin(2+Tab) TO-263 |
| SUM110N03-04P-E3 | 功能描述:MOSFET 30V 110A 120W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM110N04-02L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) 200 Degree Celcious MOSFET |
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