參數(shù)資料
型號(hào): SUM09MN20-270
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 200-V (D-S) 175C MOSFET
中文描述: N溝道200 -五(副)175C MOSFET的
文件頁數(shù): 4/5頁
文件大?。?/td> 39K
代理商: SUM09MN20-270
SUM09N20-270
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
100
Source-Drain Diode Forward Voltage
Drain Source Breakdown vs.
Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature ( C)
V
SD
- Source-to-Drain Voltage (V)
-
I
S
10
1
0.3
0.6
0.9
1.5
V
GS
= 10 V
I
D
T
J
= 25 C
(
-
r
D
)
0
180
190
200
210
220
230
240
-50
-25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature ( C)
(
V
(
I
D
= 1.0 mA
1.2
T
J
= 150 C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SUM09N20-270 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) 175 Degree Celcious MOSFET
SUM09N20-270_06 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S), 175Celsius MOSFET
SUM09N20-270-E3 功能描述:MOSFET 200V 9.0A 60W 270mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUM110N02-03 制造商:Vishay Intertechnologies 功能描述:
SUM110N02-03P 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) 175 C MOSFET