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參數(shù)資料
| 型號： | SUM110N02-03P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) 175 C MOSFET |
| 中文描述： | N溝道20 - V（下副秘書長）175葷MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | SUM110N02-03P |
FEATURES
TrenchFET Power MOSFET
175 C Junction Temperature
Optimized for Low-Side Synchronous
Rectifier
APPLICATIONS
Synchronous Buck DC/DC Conversion
- Desktop
- Server
Load Switch
SUM110N02-03P
Vishay Siliconix
New Product
Document Number: 72096
S-22451—Rev. A, 20-Jan-03
www.vishay.com
1
N-Channel 20-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
a
110
a
110
a
0.0032 @ V
GS
= 10 V
0.0052 @ V
GS
= 4.5 V
20
D
G
S
N-Channel MOSFET
DRAIN connected to TAB
TO-263
S
D
G
Top View
SUM110N02-03P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
Gate-Source Voltage
V
GS
20
V
T
C
= 25 C
110
a
Continuous Drain Current
(T
J
= 175 C)
T
C
= 100 C
I
D
102
A
Pulsed Drain Current
I
DM
300
T
C
= 25 C
T
A
= 25 C
d
120
c
Maximum Power Dissipation
b
P
D
3.75
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient (PCB Mount)
d
R
thJA
40
Junction-to-Case
R
thJC
1.25
C/W
Notes
a.
b.
c.
d.
Package limited.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
1%.
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PDF描述 |
|---|---|
| SUM110N03-03P | N-Channel 30-V (D-S), 175C MOSFET |
| SUM110N06-06 | N-Channel 60-V (D-S), 175C MOSFET |
| SUM110N10-09 | TERMINAL |
| SUM110N10-09-E3 | TERMINAL |
| SUM110P06-08L | P-Channel 60-V (D-S) 175 Degrees Celcious MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SUM110N03 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) 175C MOSFET |
| SUM110N03-03 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) 175C MOSFET |
| SUM110N03-03P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S), 175C MOSFET |
| SUM110N03-03P-E3 | 功能描述:MOSFET 30V 110A 375W 2.6mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM110N03-04P | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 30V 110A 3-Pin(2+Tab) TO-263 |
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