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參數(shù)資料
| 型號(hào)： | SUM09MN20-270 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 200-V (D-S) 175C MOSFET |
| 中文描述： | N溝道200 -五（副）175C MOSFET的 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 39K |
| 代理商： | SUM09MN20-270 |
SUM09N20-270
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
200
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2
4
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 160 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 160 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
10
A
V
GS
= 10 V, I
D
= 5 A
0.216
0.270
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 5 A, T
J
= 125 C
0.54
V
GS
= 10 V, I
D
= 5 A, T
J
= 175 C
0.71
V
GS
= 6 V, I
D
= 5 A
0.240
0.300
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 5 A
15
S
Dynamic
b
Input Capacitance
C
iss
580
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
75
pF
Reverse Transfer Capacitance
C
rss
30
Total Gate Charge
c
Q
g
11
17
Gate-Source Charge
c
Q
gs
V
= 100 V,
V
= 10 V, I
= 10 A
DS
GS
2.7
nC
Gate-Drain Charge
c
Q
gd
D
4
Gate Resistance
R
G
4.0
Turn-On Delay Time
c
t
d(on)
10
15
Rise Time
c
t
r
V
= 100 V, R
= 10
10 A, V
GEN
= 10 V, R
G
= 2.5
35
55
ns
Turn-Off Delay Time
c
t
d(off)
I
D
25
40
Fall Time
c
t
f
40
60
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
9
A
Pulsed Current
I
SM
10
Forward Voltage
a
V
SD
I
F
= 10 A, V
GS
= 0 V
0.9
1.5
V
Reverse Recovery Time
t
rr
100
150
ns
Peak Reverse Recovery Current
I
RM(REC)
I
= 10 A, di/dt = 100 A/ s
F
5
8
A
Reverse Recovery Charge
Q
rr
0.25
0.6
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM09N20-270 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) 175 Degree Celcious MOSFET |
| SUM09N20-270_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S), 175Celsius MOSFET |
| SUM09N20-270-E3 | 功能描述:MOSFET 200V 9.0A 60W 270mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM110N02-03 | 制造商:Vishay Intertechnologies 功能描述: |
| SUM110N02-03P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) 175 C MOSFET |
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