參數(shù)資料
型號: SUD50N024-09P
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 22-V (D-S) 175C MOSFET
中文描述: N溝道22 - V(下局副局長)175C MOSFET的
文件頁數(shù): 4/4頁
文件大小: 60K
代理商: SUD50N024-09P
SUD50N024-09P
Vishay Siliconix
www.vishay.com
4
Document Number: 72290
S-41168—Rev. B, 14-Jun-04
THERMAL RATINGS
0
5
10
15
20
25
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
Drain-to-Source Voltage (V)
I
1000
10
0.01
0.1
1
10
100
1
100
T
= 25 C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
4
10
3
10
2
10
1
1
10
N
T
Maximum Drain Current vs.
Ambiemt Temperature
T
A
Ambient Temperature ( C)
I
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1 ms
10 ms
100 ms
1 s
10 s
100 s
dc
10, 100 s
1000
100
0.1
Limited
by r
DS(on)
相關(guān)PDF資料
PDF描述
SUD50N024-09P-E3 N-Channel 22-V (D-S) 175C MOSFET
SUD50N03-06P N-Channel 30-V (D-S) 175C MOSFET
SUD50N03-07 N-Channel 30-V (D-S) 175ºC MOSFET
SUD50N03-07-E3 N-Channel 30-V (D-S) 175C MOSFET
SUD50N03-10 N-Channel 30-V (D-S), 175C MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SUD50N024-09P-E3 功能描述:MOSFET 24V 49A 6.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD50N025-05P 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 25-V (D-S) MOSFET
SUD50N025-06P-E3 功能描述:MOSFET 25V 78A 65W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD50N025-09BP 制造商:SHENZHENFREESCALE 制造商全稱:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:N-Channel 25-V (D-S) MOSFET
SUD50N025-09BP-E3 功能描述:MOSFET 25V 62A 55W 8.6mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube