- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365762 > SUD50N024-09P-E3 (Vishay Intertechnology,Inc.) N-Channel 22-V (D-S) 175C MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | SUD50N024-09P-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 22-V (D-S) 175C MOSFET |
| 中文描述： | N溝道22 - V（下局副局長）175C MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | SUD50N024-09P-E3 |
FEATURES
TrenchFET Power MOSFET
175 C Junction Temperature
PWM Optimized for High Efficiency
APPLICATIONS
High-Side Synchronous Buck DC/DC
Conversion
Desktop
Server
SUD50N024-09P
Vishay Siliconix
Document Number: 72290
S-41168—Rev. B, 14-Jun-04
www.vishay.com
1
N-Channel 22-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
d
24
c
0.0095 @ V
GS
= 10 V
49
0.017 @ V
GS
= 4.5 V
36
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Ordering Information: SUD50N024-09P
SUD50N024-09P—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Pulse Voltage
V
DS(pulse)
24
C
Drain-Source Voltage
V
DS
22
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
a
T
C
= 25 C
I
D
49d
T
C
= 100 C
34
d
Pulsed Drain Current
I
DM
100
A
Continuous Source Current (Diode Conduction)
a
I
S
4.3
Avalanche Current, Single Pulse
L = 0.1 mH
I
AS
29
Avalanche Energy, Single Pulse
E
AS
42
mJ
Maximum Power Dissipation
T
A
= 25 C
P
D
6.5
a
W
T
C
= 25 C
39.5
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
19
23
Steady State
40
50
C/W
Maximum Junction-to-Case
R
thJC
3.1
3.8
Notes
a.
b.
c.
d.
Surface Mounted on FR4 Board, t
Limited by package
Pulse condition: T
= 105 C, 50 ns, 300 kHz operation
Calculation based on maximum allowable Junction Temperature. Package limitation current is 25 A.
10 sec.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SUD50N03-06P | N-Channel 30-V (D-S) 175C MOSFET |
| SUD50N03-07 | N-Channel 30-V (D-S) 175ºC MOSFET |
| SUD50N03-07-E3 | N-Channel 30-V (D-S) 175C MOSFET |
| SUD50N03-10 | N-Channel 30-V (D-S), 175C MOSFET |
| SUD50N03-11 | Low Side Reverse Polarity protection; |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD50N025-05P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 25-V (D-S) MOSFET |
| SUD50N025-06P-E3 | 功能描述:MOSFET 25V 78A 65W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N025-09BP | 制造商:SHENZHENFREESCALE 制造商全稱:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:N-Channel 25-V (D-S) MOSFET |
| SUD50N025-09BP-E3 | 功能描述:MOSFET 25V 62A 55W 8.6mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N03-06AP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。