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參數(shù)資料
| 型號： | SUD50N02-11P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) 175∩ MOSFET |
| 中文描述： | N溝道20 - V（下副秘書長）MOSFET的175∩ |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | SUD50N02-11P |
SUD50N02-11P
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72094
S-22453
—
Rev. A, 20-Jan-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 125 C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 20 A
20
Gate Threshold Voltage
0.8
3.0
V
Gate-Body Leakage
20 V
100
nA
1
50
Zero Gate Voltage Drain Current
I
DSS
A
On-State Drain Current
b
I
D(on)
50
A
0.0086
0.011
0.0165
0.020
b
Drain-Source On-State Resistance
r
DS(on)
0.016
Forward Transconductance
b
Dynamic
a
g
fs
15
S
Input Capacitance
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
1190
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0 V, V
DS
= 10 V, f = 1 MHz
435
190
pF
Gate Resistance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
3.5
9.2
4
3
11
10
30
9
14
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 50 A
nC
20
15
45
15
V
= 10 V, R
= 0.2
50 A, V
GEN
= 10 V, R
G
= 2.5
I
D
ns
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
Pulsed Current
Diode Forward Voltage
b
I
SM
V
SD
t
rr
100
A
I
F
= 50 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ s
1.2
1.5
V
Source-Drain Reverse Recovery Time
25
50
ns
Notes
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
Independent of operating temperature.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
20
40
60
80
100
0
2
4
6
8
10
0
20
40
60
80
100
0
1
2
3
4
5
6
7
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
V
GS
- Gate-to-Source Voltage (V)
-
I
25 C
125 C
T
C
= -55 C
V
GS
= 10 thru 6 V
3 V
4 V
5 V
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相關(guān)代理商/技術(shù)參數(shù) |
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| SUD50N02-12P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N - CHANNEL 20 - V ( D -S ) 175C MOSFET |
| SUD50N024-06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 22-V (D-S) 175C MOSFET |
| SUD50N024-06P | 制造商:Vishay Semiconductors 功能描述:MOSFET Transistor, N-Channel, TO-252 |
| SUD50N024-06P-E3 | 功能描述:MOSFET 24V 80A 6.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N024-09P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 22-V (D-S) 175C MOSFET |
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