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參數(shù)資料
| 型號： | SUD50N024-06 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 22-V (D-S) 175C MOSFET |
| 中文描述： | N溝道22 - V（下局副局長）175C MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 45K |
| 代理商： | SUD50N024-06 |
FEATURES
TrenchFET Power MOSFET
175 C Junction Temperature
PWM Optimized for High Efficiency
APPLICATIONS
Synchronous Buck DC/DC Conversion
- Desktop
- Server
SUD50N024-06P
Vishay Siliconix
New Product
Document Number: 72289
S-31398—Rev. A, 30-Jun-03
www.vishay.com
1
N-Channel 22-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
d
24
C
0.006 @ V
GS
= 10 V
80
0.0095 @ V
GS
= 4.5 V
64
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Order Number:
SUD50N024-06P
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Pulse Voltage
V
DS(pulse)
24
C
Drain-Source Voltage
V
DS
22
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
a
T
C
= 25 C
I
D
80
d
T
C
= 100 C
56
d
Pulsed Drain Current
I
DM
100
A
Continuous Source Current (Diode Conduction)
a
I
S
26
Avalanche Current, Single Pulse
L = 0.1 mH
I
AS
45
Avalanche Energy, Single Pulse
E
AS
101
mJ
Maximum Power Dissipation
T
A
= 25 C
P
D
6.8
a
W
T
C
= 25 C
65
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
18
22
Steady State
40
50
C/W
Maximum Junction-to-Case
R
thJC
1.9
2.3
Notes
a.
b.
c.
d.
Surface Mounted on FR4 Board, t
Limited by package
Pulse condition: T
= 105 C, 50 ns, 300 kHz operation
Calculation based on maximum allowable Junction Temperature. Package limitation current is 50 A.
10 sec.
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| SUD50N024-06P | N-Channel 22-V (D-S) 175C MOSFET |
| SUD50N024-09P | N-Channel 22-V (D-S) 175C MOSFET |
| SUD50N024-09P-E3 | N-Channel 22-V (D-S) 175C MOSFET |
| SUD50N03-06P | N-Channel 30-V (D-S) 175C MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD50N024-06P | 制造商:Vishay Semiconductors 功能描述:MOSFET Transistor, N-Channel, TO-252 |
| SUD50N024-06P-E3 | 功能描述:MOSFET 24V 80A 6.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N024-09P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 22-V (D-S) 175C MOSFET |
| SUD50N024-09P-E3 | 功能描述:MOSFET 24V 49A 6.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N025-05P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 25-V (D-S) MOSFET |
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