參數(shù)資料
型號: SUD50N02-04P
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 20-V (D-S) 175C MOSFET
中文描述: N溝道20 - V(下局副局長)175C MOSFET的
文件頁數(shù): 2/3頁
文件大?。?/td> 177K
代理商: SUD50N02-04P
SPICE Device Model SUD50N02-04P
Vishay Siliconix
www.vishay.com
2
Document Number: 72389
08-Jun-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
1.7
V
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
1190
A
V
GS
= 10 V, I
D
= 20 A
0.0035
0.0035
V
GS
= 10 V, I
D
= 20 A, T
J
= 125°C
0.0048
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 20 A
0.0049
0.0048
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
68
S
Forward Voltage
a
Dynamic
b
V
SD
I
S
= 50 A, V
GS
= 0 V
0.91
0.90
V
Input Capacitance
C
iss
4807
5000
Output Capacitance
C
oss
1664
1650
Reverse Transfer Capacitance
C
rss
V
GS
= 0 V, V
DS
= 10 V, f = 1 MHz
641
770
Pf
Total Gate Charge
c
Q
g
40
40
Gate-Source Charge
c
Q
gs
14
14
Gate-Drain Charge
c
Q
gd
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 50 A
13
13
NC
Turn-On Delay Time
c
t
d(on)
31
20
Rise Time
c
t
r
18
20
Turn-Off Delay Time
c
t
d(off)
34
50
Fall Time
c
t
f
V
DD
= 10 V, R
L
= 0.20
I
D
50 A, V
GEN
= 10 V, R
G
= 2.5
31
15
Ns
Notes
a. Pulse test; pulse width
300
μ
s, duty cycle
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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