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參數(shù)資料
| 型號： | SUD50N02-09P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) 175 Degree Celcious MOSFET |
| 中文描述： | N溝道20 - V（下副秘書長）175度Celcious MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | SUD50N02-09P |
FEATURES
TrenchFET Power MOSFET
175 C Junction Temperature
PWM Optimized for High Efficiency
100% R
g
Tested
APPLICATIONS
High-Side Synchronous Buck DC/DC
Conversion
Desktop
Server
SUD50N02-09P
Vishay Siliconix
Document Number: 72034
S-41168—Rev. C, 14-Jun-04
www.vishay.com
1
N-Channel 20-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
a
20
0.0095 @ V
GS
= 10 V
20
0.017 @ V
GS
= 4.5 V
15
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Ordering Information: SUD50N02-09P
SUD50N02-09P—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
a
T
A
= 25 C
I
D
20
T
C
= 100 C
14
Pulsed Drain Current
I
DM
100
A
Continuous Source Current (Diode Conduction)
a
I
S
4.3
Avalanche Current
L = 0 1 mH
L = 0.1 mH
I
AS
29
Single Pulse Avalanche Energy
E
AS
42
mJ
Maximum Power Dissipation
T
A
= 25 C
P
D
6.5
a
W
T
C
= 25 C
39.5
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
19
23
Steady State
40
50
C/W
Maximum Junction-to-Case
R
thJC
3.1
3.8
Notes
a.
b.
Surface Mounted on FR4 Board, t
Limited by package
10 sec.
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PDF描述 |
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| SUD50N02-09P-E3 | N-Channel 20-V (D-S) 175 Degree Celcious MOSFET |
| SUD50N02-11P | N-Channel 20-V (D-S) 175∩ MOSFET |
| SUD50N024-06 | N-Channel 22-V (D-S) 175C MOSFET |
| SUD50N024-06P | N-Channel 22-V (D-S) 175C MOSFET |
| SUD50N024-09P | N-Channel 22-V (D-S) 175C MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SUD50N02-09P_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S), 175Celsius MOSFET |
| SUD50N02-09P-E3 | 功能描述:MOSFET 20V 20A 6.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N02-09P-GE3 | 制造商:Vishay Semiconductors 功能描述:N-CHANNEL 20-V (D-S) 150C MOSFET - Tape and Reel 制造商:Vishay Intertechnologies 功能描述:MOSFET 20V 0.0095ohm@10V 20A N-CH |
| SUD50N02-11P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) 175℃ MOSFET |
| SUD50N02-12P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N - CHANNEL 20 - V ( D -S ) 175C MOSFET |
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