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參數(shù)資料
| 型號： | SUD45P03-15 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 30-V (D-S), 150C MOSFET |
| 中文描述： | P溝道30 V的（副），150℃MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 41K |
| 代理商： | SUD45P03-15 |
SUD45P03-10
Vishay Siliconix
www.vishay.com
2-2
Document Number: 70766
S-02596
—
Rev. D, 21-Nov-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=
–
250 A
–
30
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
250 A
–
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
=
–
30 V, V
GS
= 0 V
–
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
30 V, V
GS
= 0 V, T
J
= 125 C
–
50
A
V
DS
=
–
5 V, V
GS
=
–
10 V
–
50
On-State Drain Current
a
I
D(on)
V
DS
=
–
5 V, V
GS
=
–
4.5 V
–
20
A
V
GS
=
–
10 V, I
D
=
–
15 A
0.010
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
–
10 V, I
D
=
–
15 A, T
J
= 125 C
0.015
V
GS
=
–
4.5 V, I
D
=
–
15 A
0.018
Forward Transconductance
a
g
fs
V
DS
=
–
15 V, I
D
=
–
15 A
20
S
Dynamic
b
Input Capacitance
C
iss
6000
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
=
–
25 V, f = 1 MHz
1100
pF
Reverse Transfer Capacitance
C
rss
700
Total Gate Charge
c
Q
g
90
150
Gate-Source Charge
c
Q
gs
V
=
–
15 V,
V
=
–
10 V, I
=
–
45 A
DS
GS
20
nC
Gate-Drain Charge
c
Q
gd
D
16
Turn-On Delay Time
c
t
d(on)
15
25
Rise Time
c
t
r
V
=
–
15 V, R
= 0.33
–
45 A, V
GEN
=
–
10 V, R
G
= 2.4
375
550
Turn-Off Delay Time
c
t
d(off)
I
D
100
200
ns
Fall Time
c
t
f
140
250
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
Pulsed Current
I
SM
100
A
Diode Forward Voltage
a
V
SD
I
F
=
–
45 A, V
GS
= 0 V
1.0
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
=
–
45 A, di/dt = 100 A/ s
55
100
ns
Notes
a.
b.
c.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD45P03-15 | 制造商:Vishay Siliconix 功能描述:MOSFET P D-PAK |
| SUD45P03-15A | 功能描述:MOSFET 30V 13A 70W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD45P03-15A | 制造商:Vishay Siliconix 功能描述:MOSFET P D-PAK |
| SUD45P03-15A-E3 | 功能描述:MOSFET 30V 13A 70W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD45P03-15-E3 | 功能描述:MOSFET 30V 13A 70W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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