參數(shù)資料
型號: SUD45N05-20L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 50-V (D-S), 175C MOSFET, Logic Level
中文描述: N溝道50五(副),175C MOSFET的邏輯電平
文件頁數(shù): 4/4頁
文件大?。?/td> 71K
代理商: SUD45N05-20L
SUD45N05-20L
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
Document Number: 70271
S-57247—Rev. E, 23-Mar-98
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
(
r
D
T
J
– Junction Temperature ( C)
V
SD
– Source-to-Drain Voltage (V)
I
S
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
–50
–25
0
25
50
75
100
125
150
175
100
10
1
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 V
I
D
T
J
= 25 C
T
J
= 150 C
0
Safe Operating Area
V
DS
– Drain-to-Source Voltage (V)
I
D
200
10
0.1
0.1
1
10
100
Limited
by r
DS(on)
1
100
T
= 25 C
Single Pulse
1 ms
10 ms
100 ms
dc, 1 s
100 s
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
–4
10
–3
10
–2
10
–1
1
10
N
T
Maximum Drain Current vs. CaseTemperature
T
C
– Case Temperature ( C)
I
D
0
10
20
30
40
50
0
25
50
75
100
125
150
175
0.2
0.1
Duty Cycle = 0.5
30
0.02
0.05
Single Pulse
相關(guān)PDF資料
PDF描述
SUD45P03-10 P-Channel 30-V 150C MOSFET
SUD45P03-15 P-Channel 30-V (D-S), 150C MOSFET
SUD50N02-04P N-Channel 20-V (D-S) 175C MOSFET
SUD50N02-09P N-Channel 20-V (D-S) 175 Degree Celcious MOSFET
SUD50N02-09P-E3 N-Channel 20-V (D-S) 175 Degree Celcious MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SUD45N05-20L-E3 功能描述:MOSFET 50V 30A 75W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD45N05-20L-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SUD45N05-20L-T4 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 50V 30A 3-Pin(2+Tab) DPAK T/R
SUD45P03-09 制造商:SHENZHENFREESCALE 制造商全稱:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:P-Channel 30 V (D-S) MOSFET
SUD45P03-09-GE3 功能描述:MOSFET P-CH D-S 30V DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:TrenchFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件