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參數(shù)資料
| 型號(hào)： | SUD45N05-20L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 50-V (D-S), 175C MOSFET, Logic Level |
| 中文描述： | N溝道50五（副），175C MOSFET的邏輯電平 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 71K |
| 代理商： | SUD45N05-20L |
SUD45N05-20L
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70271
S-57247—Rev. E, 23-Mar-98
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
50
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.0
2.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 50 V, V
GS
= 0 V
1
A
V
DS
= 50 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 50 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
43
A
D i S
Drain-Source On-State Resistance
O S
b
V
GS
= 10 V, I
D
= 20 A
0.018
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
0.036
V
GS
= 10 V, I
D
= 43 A, T
J
= 125 C
0.040
V
GS
= 4.5 V, I
D
= 43 A
0.020
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 43 A
20
S
Dynamic
a
Input Capacitance
C
iss
1800
3600
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
370
pF
Reverse Transfer Capacitance
C
rss
130
Total Gate Charge
c
Q
g
V
DS
= 25 V V
V
GS
= 10 V, I
D
= 43 A
10 V I
43
60
Gate-Source Charge
c
Q
gs
7
nC
Gate-Drain Charge
c
Q
gd
10
Turn-On Delay Time
c
t
d(on)
V
= 25 ,
= 0 6
43 A V
43 A, V
GEN
= 10 V, R
G
= 2.5
10
20
Rise Time
c
t
r
I
D
10 V R
2 5
10
20
ns
Turn-Off Delay Time
c
t
d(off)
32
60
Fall Time
c
t
f
7
15
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
Pulsed Current
I
SM
43
A
Diode Forward Voltage
b
V
SD
I
F
= 43 A, V
GS
= 0 V
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 43 A, di/dt = 100 A/ s
49
100
ns
Notes
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
Independent of operating temperature.
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