參數(shù)資料
型號: SUB85N03-07P
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 30-V (D-S) 175C MOSFET
中文描述: N溝道30 V的(副)175C MOSFET的
文件頁數(shù): 5/5頁
文件大小: 72K
代理商: SUB85N03-07P
SUP/SUB85N03-07P
Vishay Siliconix
New Product
Document Number: 71147
S-00757—Rev. B, 10-Apr-00
www.vishay.com FaxBack 408-970-5600
2-5
0
20
40
60
80
100
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
– Drain-to-Source Voltage (V)
1000
10
0.1
1
10
100
Limited
by r
DS(on)
0.1
100
T
= 25 C
Single Pulse
Maximum Avalanche and Drain Current
vs. Case Temperature
T
C
– Ambient Temperature ( C)
I
D
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
–4
10
–3
10
–2
10
–1
1
N
T
10
0.2
0.1
Duty Cycle = 0.5
I
D
1 ms
10 ms
100 ms
dc
10 s
100 s
Single Pulse
0.05
0.02
1
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SUB85N03-07P-E3 功能描述:MOSFET 30V 85A 107W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUB85N04-03 功能描述:MOSFET 40V 85A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUB85N04-03-E3 功能描述:MOSFET 40V 85A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUB85N04-04 功能描述:MOSFET 40V 85A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUB85N04-04-E3 功能描述:MOSFET 40V 85A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube