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參數(shù)資料
| 型號： | SUB85N03-07P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S) 175C MOSFET |
| 中文描述： | N溝道30 V的（副）175C MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 72K |
| 代理商： | SUB85N03-07P |
SUP/SUB85N03-07P
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 71147
S-00757—Rev. B, 10-Apr-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
30
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
2
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
120
A
D i S
Drain Source On State Resistance
Drain-Source On-State Resistance
O S
a
V
GS
= 10 V, I
D
= 30 A
0.006
0.007
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.011
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.015
V
GS
= 4.5 V, I
D
=
20 A
0.01
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
20
S
Dynamic
b
Input Capacitance
C
iss
3720
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
715
pF
Reverse Transfer Capacitance
C
rss
370
Total Gate Charge
b
Q
g
V
DS
= 15 V V
V
GS
= 10 V, I
D
= 85 A
10 V I
60
120
Gate-Source Charge
b
Q
gs
13
nC
Gate-Drain Charge
b
Q
gd
10
Turn-On Delay Time
b
t
d(on)
V
= 15 ,
= 0 18
85 A V
85 A, V
GEN
= 10 V, R
G
= 2.5
11
25
Rise Time
b
t
r
I
D
10 V R
2 5
70
140
ns
Turn-Off Delay Time
b
t
d(off)
50
100
Fall Time
b
t
f
105
200
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
c
Continuous Current
I
S
85
A
Pulsed Current
I
SM
200
Forward Voltage
a
V
SD
I
F
= 85 A, V
GS
= 0 V
1.2
1.5
V
Reverse Recovery Time
t
rr
I
F
= 85 A, di/dt = 100 A/ s
55
100
ns
Notes
a.
b.
c.
Pulse test; pulse width
Independent of operating temperature.
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SUB85N03-07P-E3 | 功能描述:MOSFET 30V 85A 107W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB85N04-03 | 功能描述:MOSFET 40V 85A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB85N04-03-E3 | 功能描述:MOSFET 40V 85A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB85N04-04 | 功能描述:MOSFET 40V 85A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB85N04-04-E3 | 功能描述:MOSFET 40V 85A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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