參數(shù)資料
型號(hào): SUB75N06-12L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 60-V (D-S), 175C MOSFET
中文描述: N溝道60五(副),175葷MOSFET的
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 77K
代理商: SUB75N06-12L
SUP/SUB75N06-12L
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
0
0.5
1.0
1.5
2.0
–50
–25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
– Junction Temperature ( C)
V
SD
– Source-to-Drain Voltage (V)
I
S
100
10
1
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 V
I
D
T
J
= 25 C
T
J
= 150 C
(
r
D
)
0
20
40
60
80
100
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
– Drain-to-Source Voltage (V)
300
10
0.1
1
10
100
Limited
by r
DS(on)
1
100
T
= 25 C
Single Pulse
Maximum Drain Current vs.
Case Temperature
T
C
– Case Temperature ( C)
I
D
1 ms
10 ms
100 ms
dc
10 s
100 s
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
–5
10
–4
10
–3
10
–2
10
–1
1
N
T
3
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
I
D
相關(guān)PDF資料
PDF描述
SUP75N06-12L N-Channel 60-V (D-S), 175C MOSFET
SUB75P03-07 P-Channel 30-V (D-S) 175C MOSFET
SUP75P03-07 P-Channel 30-V (D-S) 175C MOSFET
SUB75P03-08 P-Channel 30-V (D-S), 175C MOSFET
SUP75P03-08 P-Channel 30-V (D-S), 175C MOSFET
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