參數(shù)資料
型號： SUB75N06-12L
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 60-V (D-S), 175C MOSFET
中文描述： N溝道60五（副），175葷MOSFET的
文件頁數(shù)： 2/4頁
文件大?。?/td> 77K
代理商： SUB75N06-12L
SUP/SUB75N06-12L
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250 A
1
2
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
75
A
D i S
Drain-Source On-State Resistance
O S
O S
a
V
GS
= 10 V, I
D
= 30 A
0.0085
0.012
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.019
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.024
V
GS
= 4.5 V, I
D
= 30 A
0.0105
0.014
V
GS
= 4.5 V, I
D
= 30 A, T
J
= 125 C
0.0225
V
GS
= 4.5 V, I
D
= 30 A, T
J
= 175 C
0.03
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
25
60
S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
0 V V
25 V f
3170
Output Capacitance
C
oss
550
pF
Reversen Transfer Capacitance
C
rss
170
Total Gate Charge
c
Q
g
V
DS
= 30 V V
V
GS
= 10 V, I
D
= 75 A
10 V I
59
100
Gate-Source Charge
c
Q
gs
10
nC
Gate-Drain Charge
c
Q
gd
13.5
Turn-On Delay Time
c
t
d(on)
9
20
Rise Time
c
t
r
V
= 30 V, R
= 0.4
DD
75 A, V
GEN
= 10 V, R
G
= 2.5
8
20
ns
Turn-Off Delay Time
c
t
d(off)
L
I
D
77
150
Fall Time
c
t
f
20
40
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
75
A
Pulsed Current
I
SM
180
Forward Voltage
a
V
SD
I
F
= 75 A, V
GS
= 0 V
1.4
V
Reverse Recovery Time
t
rr
I
F
= 60 A, di/dt = 100 A/ s
60 A di/d
45
ns
Peak Reverse Recovery Current
I
RM(REC)
2
A
Reverse Recovery Charge
Q
rr
0.045
C
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
相關(guān)PDF資料
PDF描述
SUP75N06-12L N-Channel 60-V (D-S), 175C MOSFET
SUB75P03-07 P-Channel 30-V (D-S) 175C MOSFET
SUP75P03-07 P-Channel 30-V (D-S) 175C MOSFET
SUB75P03-08 P-Channel 30-V (D-S), 175C MOSFET
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SUB75N08-09L-E3 功能描述:MOSFET 75V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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SUB75N08-10-E3 功能描述:MOSFET 75V 75A 187W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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