參數(shù)資料
型號： SUP75P03-08
廠商： Vishay Intertechnology,Inc.
英文描述： P-Channel 30-V (D-S), 175C MOSFET
中文描述： P溝道30 V的（副），175C MOSFET的
文件頁數(shù)： 1/5頁
文件大?。?/td> 63K
代理商： SUP75P03-08
SUP/SUB75P03-07
Vishay Siliconix
Document Number: 71109
S-00821—Rev. B, 24-Apr-00
www.vishay.com FaxBack 408-970-5600
2-1
P-Channel 30-V (D-S) 175 C MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
a
–30
0.007 @ V
GS
= –10 V
75
0.010 @ V
GS
= –4.5 V
75
SUP75P03-07
SUB75P03-07
DRAIN connected to TAB
S
G
D
P-Channel MOSFET
TO-220AB
Top View
G D S
TO-263
S
G
Top View
D
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current
(T
J
= 175 C)
T
C
= 25 C
I
D
–75
a
A
T
C
= 125 C
–65
Pulsed Drain Current
I
DM
–240
Avalanche Current
I
AR
–60
Repetitive Avalanche Energy
b
L = 0.1 mH
E
AR
180
mJ
Power Dissipation
T
C
= 25 C (TO-220AB and TO-263)
P
D
187
d
W
T
A
= 25 C (TO-263)
c
3.75
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
PCB Mount (TO-263)
c
R
thJA
40
C/W
Free Air (TO-220AB)
R
thJA
62.5
Junction-to-Case
R
thJC
0.8
Notes:
a.
b.
c.
d.
Package limited.
Duty cycle
When mounted on 1” square PCB (FR-4 material).
See SOA curve for voltage derating.
1%.
相關(guān)PDF資料
PDF描述
SUB85N02-03 N-Channel 20-V (D-S) 175 Degree Celcious MOSFET
SUB85N02-03-E3 N-Channel 20-V (D-S) 175 Degree Celcious MOSFET
SUP85N02-03 N-Channel 20-V (D-S) 175 Degree Celcious MOSFET
SUP85N02-03-E3 N-Channel 20-V (D-S) 175 Degree Celcious MOSFET
SUB85N03-07P N-Channel 30-V (D-S) 175C MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SUP75P03-08-E3 功能描述:MOSFET 30V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUP75P05-08 功能描述:MOSFET 55V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUP75P05-08 制造商:Vishay Siliconix 功能描述:MOSFET P TO-220
SUP75P05-08-E3 功能描述:MOSFET 55V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUP75P05-08-E3 制造商:Vishay Siliconix 功能描述:P CH MOSFET, -55V, 75A, TO-220AB
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*