參數(shù)資料
型號(hào): SUB65P06-20
廠(chǎng)商: Vishay Intertechnology,Inc.
元件分類(lèi): MOSFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N溝道的PowerTrench MOSFET的
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 55K
代理商: SUB65P06-20
SUP/SUB65P06-20
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70289
S-05111
Rev. C, 10-Dec-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=
250 A
60
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
2.0
3.0
4.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
=
60 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
60 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
=
60 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
a
I
D(on)
V
DS
=
5 V, V
GS
=
10 V
120
A
V
GS
=
10 V, I
D
=
30 A
0.017
0.020
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
10 V, I
D
=
30 A, T
J
= 125 C
0.033
V
GS
=
10 V, I
D
=
30 A, T
J
= 175 C
0.042
Forward Transconductance
a
g
fs
V
DS
=
15 V, I
D
=
30 A
25
S
Dynamic
b
Input Capacitance
C
iss
4500
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
=
25 V, f = 1 MHz
870
pF
Reversen Transfer Capacitance
C
rss
350
Total Gate Charge
c
Q
g
85
120
Gate-Source Charge
c
Q
gs
V
=
30 V,
V
=
10 V, I
=
65 A
DS
GS
24
nC
Gate-Drain Charge
c
Q
gd
D
22
Turn-On Delay Time
c
t
d(on)
15
40
Rise Time
c
t
r
V
DD
=
30 V, R
L
= 0.47
65 A, V
GEN
=
10 V, R
= 2.5
40
80
Turn-Off Delay Time
c
t
d(off)
I
D
65
120
ns
Fall Time
c
t
f
G
30
60
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
65
Pulsed Current
I
SM
200
A
Forward Voltage
a
V
SD
I
F
=
65 A, V
GS
= 0 V
1.1
1.4
V
Reverse Recovery Time
t
rr
70
120
ns
Peak Reverse Recovery Current
I
RM(REC)
I
=
65 A, di/dt = 100 A/ s
F
7
9
A
Reverse Recovery Charge
Q
rr
0.245
0.54
C
Notes:
a.
b.
d.
Pulse test; pulse width
Guaranteed by design, not subject to production testing
Independent of operating temperature.
300 s, duty cycle
2%.
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