參數(shù)資料
型號: SUB75N06-08
英文描述: N-Channel Enhancement-Mode Transistors
中文描述: N溝道增強(qiáng)模式晶體管
文件頁數(shù): 1/4頁
文件大小: 47K
代理商: SUB75N06-08
SUP/SUB75N06-08
Vishay Siliconix
Document Number: 70283
S-05111—Rev. F, 10-Dec-01
www.vishay.com
2-1
N-Channel 60-V (D-S), 175 C MOSFET
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
75
a
60
0.008
D
G
S
N-Channel MOSFET
TO-220AB
Top View
SUP75N06-08
G D S
DRAIN connected to TAB
TO-263
S
D
G
Top View
SUB75N06-08
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
V
GS
20
V
Continuous Drain Current
(T
J
= 175 C)
T
C
= 25 C
75
a
T
C
= 125 C
I
D
55
Pulsed Drain Current
I
DM
240
A
Avalanche Current
I
AR
60
Repetitive Avalanche Energy
b
L = 0.1 mH
E
AR
280
mJ
T
C
= 25 C (TO-220AB and TO-263)
250
c
Power Dissipation
T
A
= 25 C (TO-263)
d
P
D
3.7
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
Parameter
Symbol
Limit
Unit
PCB Mount (TO-263)
d
40
Junction-to-Ambient
Free Air (TO-220AB)
R
thJA
62.5
C/W
Junction-to-Case
R
thJC
0.6
Notes
a.
b.
c.
d.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Package limited.
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
1%.
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PDF描述
SUP75N06-08 N-Channel 60-V (D-S), 175C MOSFET
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SUP75N06 N-Channel Enhancement-Mode Transistors
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