參數(shù)資料
型號: SUB50N03-20C
元件分類: 參考電壓二極管
英文描述: Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
中文描述: 250 的低電流運算,低反向泄露,低噪聲穩(wěn)壓二極管
文件頁數(shù): 2/5頁
文件大?。?/td> 47K
代理商: SUB50N03-20C
SUB50N03-20C
Vishay Siliconix
www.vishay.com
2
Document Number: 71175
S-02575
Rev. C, 27-Nov-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250 A
1
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 30 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50
A
V
GS
= 10 V, I
D
= 25 A
0.012
0.015
V
GS
= 10 V, I
D
= 25 A, T
J
= 125 C
0.019
0.024
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 25 A, T
J
= 175 C
0.022
0.027
V
GS
= 4.5 V, I
D
= 24 A
0.016
0.02
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 25 A
30
S
Dynamic
b
Input Capacitance
C
iss
1960
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
380
pF
Reversen Transfer Capacitance
C
rss
180
Total Gate Charge
c
Q
g
35
50
Gate-Source Charge
c
Q
gs
V
= 15 V,
V
= 20 V, I
= 50 A
DS
GS
7.6
nC
Gate-Drain Charge
c
Q
gd
D
5.6
Turn-On Delay Time
c
t
d(on)
10
20
Rise Time
c
t
r
V
DD
= 15 V, R
L
= 0.3
50 A, V
GEN
= 10 V, R
= 2.5
93
180
Turn-Off Delay Time
c
t
d(off)
I
D
30
60
ns
Fall Time
c
t
f
G
10
20
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
50
Pulsed Current
I
SM
100
A
Forward Voltage
a
V
SD
I
F
= 50 A, V
GS
= 0 V
1.3
1.6
V
Reverse Recovery Time
t
rr
35
70
ns
Peak Reverse Recovery Current
I
RM(REC)
I
= 50 A, di/dt = 100 A/ s
F
1.5
A
Reverse Recovery Charge
Q
rr
0.026
C
Current Sense Characteristics
Current Sensing Ratio
r
I
D
= 1 A, V
GSS
= 10 V, R
SENSE
= 2.2
420
520
620
Mirror Active Resistance
r
m(on)
V
GS
= 10 V, I
D
= 10 mA
3.5
Notes:
a.
e.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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