- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄372372 > SUB70N03-09BP Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode PDF資料下載
參數(shù)資料
| 型號(hào)： | SUB70N03-09BP |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 203K |
| 代理商： | SUB70N03-09BP |
SPICE Device Model SUP/SUB70N03-09BP
Vishay Siliconix
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 71701
02-Oct-01
www.vishay.com
1
N-Channel 30-V (D-S), 175°C MOSFET PWM Optimized
CHARACTERISTICS
N- and P-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical
electrical characteristics of the n-channel vertical
DMOS. The subcircuit model is extracted and
optimized over the
55 to 125
°
C temperature ranges
under the pulsed 0-to10V gate drive. The saturated
output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is
used to model the gate charge characteristics while
avoiding convergence difficulties of the switched C
gd
model. All model parameter values are optimized to
provide a best fit to the measured electrical data and
are not intended as an exact physical interpretation of
the device.
SUBCIRCUIT MODEL SCHEMATIC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SUB70N04-10 | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 70A I(D) | TO-263AB |
| SUP70N04-10 | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 70A I(D) | TO-220AB |
| SUD40N06-24 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| SUU40N06-24 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 37A I(D) | TO-251 |
| SUU40N06-25L | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 34A I(D) | TO-251 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUB70N03-09BP-E3 | 功能描述:MOSFET 30V 70A 93W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB70N03-09P | 功能描述:MOSFET 30V 70A 93W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB70N03-09P-E3 | 功能描述:MOSFET 30V 70A 93W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB70N04-10 | 功能描述:MOSFET 40V 70A 120W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB70N04-10-E3 | 功能描述:MOSFET 40V 70A 120W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。