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參數(shù)資料
| 型號： | STY60NA20 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 200V - 0.030ohm - 60 A - Max247 FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -通道200伏- 0.030ohm - 60甲- Max247快速功率MOS器件 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大小： | 263K |
| 代理商： | STY60NA20 |
STY60NM50
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| STY60NK30Z | 功能描述:MOSFET N-Ch 300 Volt 60 Amp Zener SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STY60NM50 | 功能描述:MOSFET N-Ch 500 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STY60NM60 | 功能描述:MOSFET N-Ch 600 Volt 60 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STY80NM60N | 功能描述:MOSFET N-channel 600 V, 74A Power II Mdmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STY-ITH2-02 | 制造商:Distributed By MCM 功能描述:Replacement Touch Digitizer with Glass for iPod Touch 2nd Generation |
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