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參數(shù)資料
| 型號(hào)： | STY60NM60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 0.050ohm - 60A Max247 Zener-Protected MDmesh⑩Power MOSFET |
| 中文描述： | N溝道600V的- 0.050ohm - 60A章Max247齊納⑩保護(hù)的MDmesh功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 263K |
| 代理商： | STY60NM60 |
1/8
August 2002
STY60NM50
N-CHANNEL 500V - 0.045
- 60A Max247
Zener-Protected MDmeshPower MOSFET
n
TYPICAL R
DS
(on) = 0.045
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
IMPROVED ESD CAPABILITY
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL
n
INDUSTRY’S LOWEST ON-RESISTANCE
DESCRIPTION
The MDmesh
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
l
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K
)
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STY60NM50
500V
< 0.05
60 A
Parameter
Value
Unit
500
V
500
V
±30
V
60
A
37.8
A
240
A
560
W
6
KV
4.5
15
W/°C
V/ns
–65 to 150
°C
150
°C
(1)I
SD
≤
60A, di/dt
≤
400A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
Max247
1
23
INTERNAL SCHEMATIC DIAGRAM
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|---|---|
| STY80NM60N | 功能描述:MOSFET N-channel 600 V, 74A Power II Mdmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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