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參數(shù)資料
| 型號： | STY60NM60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 0.050ohm - 60A Max247 Zener-Protected MDmesh⑩Power MOSFET |
| 中文描述： | N溝道600V的- 0.050ohm - 60A章Max247齊納⑩保護的MDmesh功率MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 263K |
| 代理商： | STY60NM60 |
3/8
STY60NM50
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 250V, I
D
= 30A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 400V, I
D
= 60A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
51
ns
t
r
Rise Time
58
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
190
266
nC
Gate-Source Charge
53
nC
Gate-Drain Charge
97
nC
Parameter
Test Conditions
V
DD
= 400V, I
D
= 60A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
51
ns
Fall Time
46
ns
Cross-over Time
108
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
60
A
Source-drain Current (pulsed)
240
A
Forward On Voltage
I
SD
= 60A, V
GS
= 0
I
SD
= 60A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 25°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
532
9.9
37
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 150°C
(see test circuit, Figure 5)
636
13.4
42
ns
μC
A
Safe Operating Area
Thermal Impedance
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|---|---|
| STY80NM60N | 功能描述:MOSFET N-channel 600 V, 74A Power II Mdmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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