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參數(shù)資料
| 型號： | STY15NA100 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 1000V-0.65Ω-15A- Max247 MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道1000V -0.65Ω- 15A條，Max247 MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | STY15NA100 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-Heatsink Typ
with Conductive Grease
0.42
40
0.05
o
C/W
o
C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
15
A
E
AS
3000
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A V
GS
= 0
1000
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8 T
c
= 125
o
C
50
500
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
I
D
= 250
μ
A
2.25
3
3.75
V
R
DS(on)
V
GS
= 10 V I
D
= 7.5 A
0.65
0.77
I
D(on)
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
15
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 7.5 A
12
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
7000
600
150
pF
pF
pF
STY15NA100
2/5
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參數(shù)描述 |
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| STY30NK90Z | 功能描述:MOSFET N-Ch 900 Volt 26 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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