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參數(shù)資料
| 型號(hào)： | STY15NA100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 1000V-0.65Ω-15A- Max247 MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道1000V -0.65Ω- 15A條，Max247 MOSFET的（不適用溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | STY15NA100 |
STY15NA100
N - CHANNEL 1000V - 0.65
- 15A - Max247
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.65
I
EFFICIENT AND RELIABLE MOUNTING
THROUGH CLIP
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
REPETITIVE AVALANCHE TESTED
I
LOW INTRINSIC CAPACITANCE
I
100% AVALANCHE TESTED
I
GATE CHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
The Max247
package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as TO-264. The
increased die capacity makes the device ideal to
reduce component count in multiple paralleled
designs and save board space with respect to
larger packages.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.77
I
D
STY15NA100
1000 V
15 A
April 1998
1
23
Max247
TM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
1000
V
1000
V
V
GS
I
D
±
30
15
V
A
I
D
9.5
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
60
A
300
W
Derating Factor
2.4
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-55 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
1/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STY16NA90 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET |
| STY25NA60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET |
| STY30N50E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| STY30NA50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STY30NK90Z | 功能描述:MOSFET N-Ch 900 Volt 26 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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