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參數(shù)資料
| 型號： | STW21NM50N |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| 中文描述： | N溝道500V - 0.15ohm - 18A條TO-220/FP/D2/I2PAK/TO-247 MOSFET的第二代MDmesh |
| 文件頁數(shù)： | 3/16頁 |
| 文件大小： | 633K |
| 代理商： | STW21NM50N |
3/16
STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
(2) Characteristic value at turn off on inductive load
Table 7: Dynamic
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
(*) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Table 8: Source Drain Diode
Symbol
I
SD
I
SDM
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
Test Conditions
Value
Typ.
Unit
Min.
500
Max.
V
(BR)DSS
Drain-source
Breakdown Voltage
Drain Source Voltage
Slope
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 1mA, V
GS
= 0
V
dv/dt(2)
Vdd=400V, Id=25A, Vgs=10V
44
V/ns
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
T
C
= 125 °C
V
GS
= ± 20V
1
10
μA
μA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
100
nA
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10V, I
D
= 9 A
2
3
4
V
Static Drain-source On
Resistance
0.150
0.190
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 9 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
Max.
Unit
Forward Transconductance
12
S
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Off-voltageRise Time
Fall Time
1950
420
60
pF
pF
pF
C
oss eq.
(*)
V
GS
= 0V, V
DS
= 0V to 400V
270
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
g
V
DD
=250 V, I
D
= 9 A
R
G
= 4.7
V
GS
= 10 V
(see Figure 18)
22
18
90
30
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400V, I
D
= 18 A,
V
GS
= 10V,
(see Figure 21)
65
10
30
nC
nC
nC
Gate Input Resistance
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Parameter
Test Conditions
Min.
Typ.
Max.
18
72
Unit
A
A
Source-drain Current
I
SD
= 18 A, V
GS
= 0
I
SD
= 18 A, di/dt = 100 A/μs
V
DD
= 100 V, T
j
= 25°C
(see Figure 19)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
360
5
27
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 18A, di/dt = 100 A/μs
V
DD
= 100 V, T
j
= 150°C
(see Figure 19)
640
6.5
27
ns
μC
A
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