參數(shù)資料
型號(hào)： STW18NK80Z
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 800V - 0.34W - 19A TO-247 Zener-Protected SuperMESH⑩Power MOSFET
中文描述： N溝道800V的- 0.34W - 19A至- 247齊納保護(hù)SuperMESH⑩功率MOSFET
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 309K
代理商： STW18NK80Z
STW18NK80Z
2/9
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
)
dv/dt (1)
Peak Diode Recovery voltage slope
T
j
T
stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I
SD
≤
19A, di/dt
≤
300A/μs, V
DD
≤
800V , T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Rthj-amb
T
l
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
800
V
800
V
± 30
V
19
A
12
A
76
A
350
W
2.4
W/°C
6000
V
4.5
V/ns
Operating Junction Temperature
-55 to 150
°C
Thermal Resistance Junction-case Max
0.36
°C/W
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
50
300
°C/W
°C
Parameter
Max Value
19
Unit
A
700
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STW18NK80Z_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800V - 0.34ヘ - 19A - TO-247 Zener-protected SuperMESH⑩ Power MOSFET
STW18NM60N 功能描述:MOSFET N-channel 600 V 0.27ohms 13A Mdmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW18NM60ND 制造商:STMicroelectronics 功能描述:POWER MOSFET - Rail/Tube 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V 13A TO-247 制造商:STMicroelectronics 功能描述:N chan, 600V, 80A, 250 mOhms, TO247 制造商:STMicroelectronics 功能描述:Single N-Channel 650 V 0.29 Ohm 130 W Through Hole Power Mosfet - TO-247 制造商:STMicroelectronics 功能描述:STW18NM60N Series N-Channel 650 V 0.285 Ohm Mdmesh II Power MosFet - TO-247 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V 0.25Ohm 13A Fdmesh II 制造商:STMicroelectronics 功能描述:Power MOSFET Nchannel FDmesh II 600V 13A
STW18NM80 功能描述:MOSFET N-channel 800 V MDMesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW19NM50N 功能描述:MOSFET POWER MOSFET N-CH 500V 13A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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