參數(shù)資料
型號： STW10NB60
廠商： 意法半導(dǎo)體
英文描述： N-Channel 600V-0.69Ω-10A- TO-247 PowerMESH MOSFET(N溝道MOSFET)
中文描述： N溝道600V的0.69Ω- 10A條至247 PowerMESH MOSFET的（不適用溝道MOSFET的）
文件頁數(shù)： 1/8頁
文件大?。?/td> 93K
代理商： STW10NB60
STW10NB60
N - CHANNEL 600V - 0.69
- 10A - TO-247
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.69
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
SWITCH MODE POWERSUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
I
HIGH CURRENT, HIGH SPEED SWITCHING
INTERNAL SCHEMATIC DIAGRAM
October 1998
1
23
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
600
V
600
V
±
30
10
V
A
I
D
6.2
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
40
A
160
W
1.28
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
(
1
) I
SD
≤
10A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.8
I
D
STW10NB60
600 V
10 A
1/8
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STW10NC60 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET
STW10NC60 制造商:STMicroelectronics 功能描述:MOSFET N TO-247
STW10NC70Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 0.58 ohm - 10.6A TO-247 Zener-Protected PowerMESH⑩III MOSFET
STW10NK60Z 功能描述:MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW10NK80Z 功能描述:MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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