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參數(shù)資料
| 型號(hào)： | STS17NH3LL |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 30V - 0.004OHM - 17A - SO-8 STripFET Power MOSFET for DC-DC conversion |
| 中文描述： | N溝道30V的- 0.004OHM - 17A條-的SO - 8 STripFET功率MOSFET的DC - DC轉(zhuǎn)換 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 187K |
| 代理商： | STS17NH3LL |
STS17NH3LL
Electrical characteristics
3/9
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250 μA, V
GS
= 0
30
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating @125°C
1
10
μA
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 16V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250μA
1
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, I
D
= 8.5A
0.004
0.005
0.0057
0.0075
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1MHz, V
GS
=
0
1810
565
41
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=15V, I
D
=17A
V
GS
=4.5V
(see Figure 2)
18
4.8
5.3
24
nC
nC
nC
R
G
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
0.5
1.5
3
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| STS17NH3LL_07 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 30V - 0.004ohm - 17A - SO-8 STripFET Power MOSFET for DC-DC conversion |
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