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參數(shù)資料
| 型號(hào)： | STR91XF_07 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ARM966E-S TM 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA |
| 中文描述： | ARM966E - ?商標(biāo)16/32位閃存微控制器與以太網(wǎng)，USB，加拿大，交流電機(jī)控制，4個(gè)定時(shí)器，模數(shù)轉(zhuǎn)換器，RTC和DMA的 |
| 文件頁(yè)數(shù)： | 53/73頁(yè) |
| 文件大?。?/td> | 595K |
| 代理商： | STR91XF_07 |
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STR91xF
Electrical characteristics
53/73
6.10 Flash memory characteristics
V
DDQ
= 2.7 - 3.6V, V
DD
= 1.65 - 2V, T
A
= -40 / 85 °C unless otherwise specified.
Table 15.
Flash memory program/erase characteristics
Notes:1 STR91xFx44 devices have 512 Kbytes primary Flash, STR91xFx32 devices have 256 Kbytes
primary Flash
2 V
DD
= 1.8V, V
DDQ
= 3.3V
,
T
A
= 25°C.
3 Flash read access for synchronous addresses is 96 MHz maximum.
4 Flash read access for asynchronous accesses requires 2 wait states when FMI clock is above
66 MHz. See STR91xF Flash Programming Manual for more information.
Table 16.
Flash memory endurance
Parameter
Test Conditions
Value
Unit
Typ
2)
Typ after
100K W/E
cycles
2)
Max
Bank erase
Primary Bank
(512 Kbytes)
1)
8
9
11.5
s
Primary Bank
(256 Kbytes)
1)
4
4.5
6
s
Secondary Bank
(32 Kbytes)
700
750
950
ms
Sector erase
Of Primary Bank
(64 Kbytes)
1300
1400
1800
ms
Of Secondary Bank
(8 Kbytes)
300
320
450
ms
Bank program
Primary Bank
(512 Kbytes)
1)
3700
4700
5100
ms
Primary Bank
(256 Kbytes)
1)
1900
2000
2550
ms
Secondary Bank
(32 Kbytes)
250
260
320
ms
Sector program
Of Primary Bank
(64 Kbytes)
500
520
640
ms
Of Secondary Bank
(8 Kbytes)
60
62
80
ms
Word program
8
9
11
μs
Sector erase
timeout
μs
Parameter
Test Conditions
Value
Unit
Min
Typ
Max
Program/erase cycles
Per word
100K
cycles
Data retention
20
years
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| STR91XFA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ARM966E-S⑩ 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA |
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