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參數(shù)資料
| 型號： | STQ1HNK60R-AP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET |
| 中文描述： | N溝道600V的- 8 -第1A的DPAK /像是iPak /至92 SuperMESH功率MOSFET |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 748K |
| 代理商： | STQ1HNK60R-AP |
3/13
STD1NK60 - STD1NK60-1 - STQ1HNK60R
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
R
DS(on)
Static Drain-source On
Resistance
DYNAMIC
Symbol
g
fs
(1)
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 30V
±100
nA
2.25
3
3.7
V
V
GS
= 10V, I
D
= 0.5 A
8
8.5
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 0.5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
1
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
156
23.5
3.8
pF
pF
pF
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 0.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480V, I
D
= 1.0 A,
V
GS
= 10V, R
G
= 4.7
Min.
Typ.
6.5
5
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
7
1.1
3.4
10
nC
nC
nC
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 0.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480V, I
D
= 1.0 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
Min.
Typ.
19
25
Max.
Unit
ns
ns
Turn-off Delay Time
Fall Time
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
24
25
44
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
1
4
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 1.0 A, V
GS
= 0
I
SD
= 1.0 A, di/dt = 100A/μs
V
DD
= 25V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
229
377
3.3
ns
μC
A
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| STQ1NC45 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH⑩Power MOSFET |
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| STQ1NC45R-AP | 制造商:STMicroelectronics 功能描述:MOSFET N-CH 450V 0.5A TO-92 |
| STQ1NC60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 380MA I(D) | TO-92 |
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