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參數(shù)資料
| 型號： | STQ1HNK60R-AP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET |
| 中文描述： | N溝道600V的- 8 -第1A的DPAK /像是iPak /至92 SuperMESH功率MOSFET |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 748K |
| 代理商： | STQ1HNK60R-AP |
STD1NK60 - STD1NK60-1 - STQ1HNK60R
2/13
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
1.0A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
STD1NK60
STD1NK60-1
STQ1HNK60R
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
1.0
0.4
A
0.63
0.25
A
4
1.6
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
30
3
W
0.24
0.025
W/°C
V/ns
dv/dt (1)
T
j
T
stg
3
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
DPAK / IPAK
4.16
100
TO-92
Rthj-case
Rthj-amb
Rthj-lead
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
°C/W
°C/W
°C/W
°C
120
40
260
275
Parameter
Max Value
Unit
DPAK / IPAK
TO-92
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
1
A
E
AS
25
mJ
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| STQ1NC45 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH⑩Power MOSFET |
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