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參數(shù)資料
| 型號： | STP7NB30FP |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
| 中文描述： | N溝道增強模式PowerMESHTM MOSFET的（不適用溝道增強模式MOSFET的） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 56K |
| 代理商： | STP7NB30FP |
THERMAL DATA
TO-220
TO220-FP
R
thj-case
Thermal Resistance Junction-case
Max
1.47
4.17
o
C/W
o
C/W
o
C/W
o
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
7
A
E
AS
150
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
300
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS
= V
GS
I
D
= 250
μ
A
3
4
5
V
R
DS(on)
V
GS
= 10V
I
D
= 3.5 A
0.75
0.9
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
7
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 3.5 A
1.5
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
500
100
15
700
140
20
pF
pF
pF
STP7NB30/FP
2/6
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相關代理商/技術參數(shù) |
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|---|---|
| STP7NB40 | 功能描述:MOSFET N-Ch 400 Volt 7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP7NB40FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| STP7NB60 | 功能描述:MOSFET N-Ch 600 Volt 7.2 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP7NB60_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.0 ヘ - 7.2A TO-220/TO-220FP PowerMESH⑩ MOSFET |
| STP7NB60FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
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