- 您現在的位置：買賣IC網 > PDF目錄381117 > STP7NB30 (意法半導體) N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) PDF資料下載
參數資料
| 型號： | STP7NB30 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
| 中文描述： | N溝道增強模式PowerMESHTM MOSFET的（不適用溝道增強模式MOSFET的） |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 56K |
| 代理商： | STP7NB30 |
STP7NB30
STP7NB30FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.75
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
January 1998
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP7NB30
STP7NB30FP
300
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
V
300
±
30
V
V
7
4
A
A
4.4
2.5
28
28
A
85
0.68
30
0.24
W
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
5.5
5.5
V/ns
V
ISO
T
stg
T
j
Insulation Withstand Voltage (DC)
2000
V
o
C
o
C
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
150
TYPE
V
DSS
R
DS(on)
<0.90
< 0.90
I
D
STP7NB30
STP7NB30FP
300 V
300 V
7A
4 A
1/6
相關PDF資料 |
PDF描述 |
|---|---|
| STP7NB30FP | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
| STP7NB40 | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
| STP7NB40FP | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
| STP85NF3LL | N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| STB85NF3LL-1 | N-CHANNEL 30V - 0.006ohm - 85A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STP7NB30FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 300V - 0.75ohm - 7A - TO-220/TO-220FP PowerMESH MOSFET |
| STP7NB40 | 功能描述:MOSFET N-Ch 400 Volt 7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP7NB40FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| STP7NB60 | 功能描述:MOSFET N-Ch 600 Volt 7.2 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP7NB60_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.0 ヘ - 7.2A TO-220/TO-220FP PowerMESH⑩ MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。